Reports say Samsung Electronics' 1c DRAM yield exceeds 80%, and HBM4 yield approaches 60%

K-LinePoet · 2026-03-06T23:43:27+00:00

Industry insiders have revealed that Samsung Electronics has achieved an 80% yield for 1c DRAM internally, the highest yield obtained under high-temperature conditions (thermal testing). By Q4 2025, the yield is expected to be around 60-70%, and it has now been significantly improved, with hopes of reaching 90% around May. Industry insiders further stated that the yield of Samsung's 1c DRAM-based HBM4 has also increased, approaching 60%, compared to about 50% in Q4 last year. (Science and Technology Innovation Board Daily)

K-LinePoet

2026-03-06 23:43:27

Industry insiders reveal that Samsung Electronics has achieved an 80% yield for 1c DRAM internally, the highest yield obtained under high-temperature conditions (thermal testing). The yield is expected to be around 60-70% in Q4 2025 and has now significantly improved, potentially reaching 90% around May. Industry insiders further stated that the yield of Samsung’s 1c DRAM-based HBM4 has also increased, approaching 60%, up from about 50% in Q4 last year. (Ke Chuang Ban Daily)

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