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China Develops First RF-Tested Silicon-Graphene-Germanium Transistor With 132GHz Cutoff Frequency on June 6

2026-06-08 12:13:10

According to Science and Technology Daily, the Chinese Academy of Sciences' Institute of Metal Research successfully developed the world's first silicon-graphene-germanium heterojunction transistor with demonstrated radiofrequency testing on June 6. In RF measurements, the device achieved an intrinsic cutoff frequency of 132GHz, setting a new record for vertical two-dimensional base-region transistors. The research, published in Nature Communications, also showed the highest transistor current gain on record. Modeling analysis indicates the device's theoretical operating frequency could exceed 1THz, entering the terahertz application band.

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