Samsung Advances 10nm-Class 7th-Gen 1D DRAM, Wafer Width Shrinks to 10-11nm

According to Citrini researcher Jukan, Samsung Electronics on June 17 announced plans to advance 10nm-class seventh-generation 1D DRAM production, with equipment introduction targeted for the first half of next year and initial production as early as year-end. The new process shrinks wafer line width from current 11-12nm to 10-11nm, improving performance and energy efficiency. Key equipment remains under development, with Samsung and partners optimizing yields and performance ahead of a detailed timeline refinement by year-end.
Disclaimer: The information on this page may come from third-party sources and is for reference only. It does not represent the views or opinions of Gate and does not constitute any financial, investment, or legal advice. Virtual asset trading involves high risk. Please do not rely solely on the information on this page when making decisions. For details, see the Disclaimer.
Comment
0/400
No comments